Homoepitaxial growth of α-Al2O3 thin films on atomically stepped sapphire substrates by pulsed laser deposition at room-temperature

Daishi SHIOJIRI; Ryosuke YAMAUCHI; Satoru KANEKO; Akifumi MATSUDA; Mamoru YOSHIMOTO

doi:10.2109/jcersj2.121.467

Express letter

Homoepitaxial growth of α-Al₂O₃ thin films on atomically stepped sapphire substrates by pulsed laser deposition at room-temperature

Daishi SHIOJIRI, Ryosuke YAMAUCHI, Satoru KANEKO, Akifumi MATSUDA, Mamoru YOSHIMOTO

Author information

Keywords: α-Al₂O₃, Pulsed laser deposition, Epitaxial growth, Atomic step, Room-temperature processing, Substrate engineering, Sapphire

JOURNAL FREE ACCESS

2013 Volume 121 Issue 1413 Pages 467-469

DOI https://doi.org/10.2109/jcersj2.121.467

Details

Abstract

Influence of the atomic-scale surface morphology of sapphire substrates on the epitaxial growth and crystallinity of Al₂O₃ thin films was investigated by pulsed laser deposition (PLD) toward sapphire substrate engineering. Homoepitaxial growth of α-Al₂O₃ thin films on R-plane sapphire (0112) substrates with 0.35-nm-high atomic steps and approximately 20-nm-wide terraces was achieved at room-temperature (approximately 20°C) by PLD. Epitaxial growth of the α-Al₂O₃ thin films was confirmed by in situ reflection high-energy electron diffraction (RHEED). The obtained epitaxial film surface was atomically stepped similar to the sapphire substrate before deposition.

Corresponding author

Register with J-STAGE for free!