Significant advances in LSI interconnect technologies over the past two decades are overviewed especially for comparing Cu/Low-κ interconnects with previous Al interconnects. Cu damascene processes, Low-κ dielectric and barrier metal materials, and typical reliability failures such as the electro-migration (EM), the stress-migration (SM) and the time-dependent dielectric breakdown (TDDB) are described as key concerns about the miniaturization of Cu/Low-κ interconnects.