Characterization of high-k materials for the advancement of high-speed ULSIs

Akira Nishiyama; Yoshiki Kamata; Ryosuke Iijima; Masahiro Koike; Tsunehiro Ino; Masato Koyama; Yuuichi Kamimuta; Mizuki Ono; Masamichi Suzuki; Chie Hongo; Akira Takashima; Akio Kaneko; Seiji Inumiya; Mariko Takayanagi

doi:10.1380/ejssnt.2003.116

Conference Papers -ALC'03-

Characterization of high-k materials for the advancement of high-speed ULSIs

Akira Nishiyama, Yoshiki Kamata, Ryosuke Iijima, Masahiro Koike, Tsunehiro Ino, Masato Koyama, Yuuichi Kamimuta, Mizuki Ono, Masamichi Suzuki, Chie Hongo, Akira Takashima, Akio Kaneko, Seiji Inumiya, Mariko Takayanagi

Author information

Akira Nishiyama
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Yoshiki Kamata
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Ryosuke Iijima
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Masahiro Koike
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Tsunehiro Ino
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Masato Koyama
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Yuuichi Kamimuta
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Mizuki Ono
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Masamichi Suzuki
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Chie Hongo
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Akira Takashima
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
Akio Kaneko
Semiconductor Company, Toshiba Corporation
Seiji Inumiya
Semiconductor Company, Toshiba Corporation
Mariko Takayanagi
Semiconductor Company, Toshiba Corporation

Keywords: Sputter deposition, X-ray photoelectron spectroscopy

JOURNAL FREE ACCESS

2003 Volume 1 Pages 116-119

DOI https://doi.org/10.1380/ejssnt.2003.116

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Abstract

Insulators with high dielectric constants (so-called high-k) have been intensively investigated for the replacement of SiO₂ gate dielectric of MOS transistors for high-speed ULSIs in near future. The characterization results of the Hf-silicate gate dielectric, especially in terms of its structural transformation during high temperature annealing, are presented. Phase separation and micro-crystallization in Hf-silicates were evaluated using XPS, TEM, and XRD. Impurity diffusion through the dielectric was also examined using the backside SIMS of the p⁺-poly-Si/Hf-silicate/Si-substrate system. It has also been revealed that such thermal stability problems for Hf-silicates can be solved with nitrogen incorporation in the film using the physical analyses outlined above. [DOI: 10.1380/ejssnt.2003.116]

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