e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Reviews
Atomic depth distribution analysis and growth dynamics of metals on metal-covered Si(111) surfaces studied by incident-angle-dependent RHEED-TRAXS (total-reflection-angle x-ray spectroscopy)
Toshiro Yamanaka
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2003 Volume 1 Pages 91-101

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Abstract

During observation of reflection high-energy electron diffraction, characteristic x-rays are emitted from surfaces. The intensities of these x-rays change with change in the incident glancing angle (θg) of the primary electron beam, since density distribution of electrons near the surface changes with change in θg. By analyzing θg dependence of x-ray intensities, the depth distribution of elements near the surface can be determined without destruction of the surface. Resolution of depth in this method is one monolayer at the uppermost layers. By using this method, various growth motions of elements, such as substitution, alloying and floating were observed during growth of metals on metal-covered Si(111) surfaces. Morphology and growth modes of metals were significantly altered by preadsorption of other metals, and sometimes very flat metal films that would be applicable for fabrication of future electronic nano devices were obtained. In this review, the method for analysis of depth distribution of elements and growth modes of metals (Au, Ag, Ga, In and Sn) on an Si(111) surface precovered by another metal are described. [DOI: 10.1380/ejssnt.2003.91]

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