Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment

Hyung-Ik Lee; Dae Won Moon; Suhk Kun Oh; Hee Jae Kang; Hyun Kyong Kim; Jeong Yun Won

doi:10.1380/ejssnt.2004.24

Conference -ALC'03-

Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment

Hyung-Ik Lee, Dae Won Moon, Suhk Kun Oh, Hee Jae Kang, Hyun Kyong Kim, Jeong Yun Won

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Keywords: Damage profile, Depth resolution, Delta layer

JOURNAL FREE ACCESS

2004 Volume 2 Pages 24-27

DOI https://doi.org/10.1380/ejssnt.2004.24

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Abstract

The sputter damage profile of a Si(100) by low energy O₂⁺ and Ar⁺ ion bombardment with various incident angles was measured by using medium energy ion scattering spectroscopy. It was observed that the damaged Si surface layer could be minimized down to 0.5∼0.6 nm with grazing incident angle of 80° for 500 eV Ar⁺ and O₂⁺ ion bombardment. The SIMS depth resolution for a GaAs delta layer in Si and a multiple boron nitride delta layer in Si with low O₂⁺ ion bombardment was sub-nm, which is in a good agreement with the measured damaged layer thickness. [DOI: 10.1380/ejssnt.2004.24]

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