Dynamic surface structures of Tin (Sn) on Si(111) were studied by using low energy electron microscope (LEEM). Different from the reported phase diagram, (√3 × √3)-R 30° Sn structure is found existing only in a narrow Sn film thickness range and disappearing quickly over 1/3 monolayer (ML) Sn deposition at substrate temperature of 400°C. Sn islands, which are different from the S-K mode growth, begin to grow from around 1/5 ML along steps or domain boundaries. The models of Sn growth on Si(111) are proposed. [DOI: 10.1380/ejssnt.2005.350]