Formation and transport properties of Si(111)/β-FeSi2/Si nanocluster structures

N. G. Galkin; D. L. Goroshko; A. S. Gouralnik; V. O. Polyarnyi; I. V. Louchaninov; S. V. Vavanova

doi:10.1380/ejssnt.2005.97

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Formation and transport properties of Si(111)/β-FeSi₂/Si nanocluster structures

N. G. Galkin, D. L. Goroshko, A. S. Gouralnik, V. O. Polyarnyi, I. V. Louchaninov, S. V. Vavanova

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Keywords: Atomic force microscopy, Electrical transport measurements, Epitaxy, Nanocluster materials, Morphology, Fe, Silicides

JOURNAL FREE ACCESS

2005 Volume 3 Pages 97-106

DOI https://doi.org/10.1380/ejssnt.2005.97

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Abstract

Processes of β-FeSi₂ nanosize islands growth on Si(111)7× 7 surface and Si(111)-Cr surface phases and silicon growth over β-FeSi₂ nanosize islands have been studied by LEED, in situ electrical measurements and ex situ atomic force microscopy. The close matching of electric parameters of silicon with buried iron disilicide clusters and Si(111)7× 7-Cr surface phases proves minimal carrier scattering on these clusters. Thermoelectric measurements of buried β-FeSi₂ islands revealed a very high value of the thermoelectric power coefficient as compared with p-type clean silicon. [DOI: 10.1380/ejssnt.2005.97]

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