Surface Reactions of Co on SiO2 thin layer/Si substrate Studied by LEEM and PEEM

Fumihiko Maeda; Hiroki Hibino; Satoru Suzuki; Yoshihiro Kobayashi; Yoshio Watanabe; FangZhun Guo

doi:10.1380/ejssnt.2006.155

Conference -ISSS-4-

Surface Reactions of Co on SiO₂ thin layer/Si substrate Studied by LEEM and PEEM

Fumihiko Maeda, Hiroki Hibino, Satoru Suzuki, Yoshihiro Kobayashi, Yoshio Watanabe, FangZhun Guo

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Keywords: low energy electron microscopy, photoemission electron microscopy, surface chemical reaction, X-ray adsorption spectroscopy, cobalt

JOURNAL FREE ACCESS

2006 Volume 4 Pages 155-160

DOI https://doi.org/10.1380/ejssnt.2006.155

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Abstract

To clarify how Co reacts with a SiO₂ layer on Si substrates, the annealing processes were observed using low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM). LEEM results using patterned substrate showed that Co silicide nano-dots form and that the Co diffusion length on the SiO₂ layer is very small. From PEEM observations of a SiO₂ layer with voids on Si substrate, we found that Co atoms in the void area remain because of the formation of silicides, but those on the SiO₂ surface disappear because metallic Co atoms easily diffuse. Co diffusion through the SiO₂ layer to the Si substrate can compatibly explain these two results. [DOI: 10.1380/ejssnt.2006.155]

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