Selectively formed GaAs quantum nanostructures and their application to single electron integrated circuits

Y. Natsui; Y. Miyoshi; N. Ooike; J. Motohisa; T. Fukui

doi:10.1380/ejssnt.2006.180

Conference -ISSS-4-

Selectively formed GaAs quantum nanostructures and their application to single electron integrated circuits

Y. Natsui, Y. Miyoshi, N. Ooike, J. Motohisa, T. Fukui

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Keywords: Electrical transport (conductivity, resistivity, mobility, etc.), Epitaxy, Gallium Arsenide, Nano-electronics and related devices

JOURNAL FREE ACCESS

2006 Volume 4 Pages 180-183

DOI https://doi.org/10.1380/ejssnt.2006.180

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Abstract

We propose and fabricate a 1-bit adder circuit having only two single electron transistors (SETs) for AND and XOR logic operations by using SA-MOVPE. Two SETs have two common input gates and different Coulomb oscillation periods. The logic operation can be achieved on the basis of a binary decision diagram (BDD) architecture using Coulomb blockade (CB) in GaAs dots. We also demonstrate Coulomb oscillations caused by input gate voltages for a SET. Oscillation features of two input gates are the same and their phases can be shifted by the control gate. [DOI: 10.1380/ejssnt.2006.180]

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