Tip-induced band bending and its effect on local barrier height measurement studied by light-modulated scanning tunneling spectroscopy

Shoji Yoshida; Junichi Kikuchi; Yuya Kanitani; Osamu Takeuchi; Haruhiro Oigawa; Hidemi Shigekawa

doi:10.1380/ejssnt.2006.192

Conference -ISSS-4-

Tip-induced band bending and its effect on local barrier height measurement studied by light-modulated scanning tunneling spectroscopy

Shoji Yoshida, Junichi Kikuchi, Yuya Kanitani, Osamu Takeuchi, Haruhiro Oigawa, Hidemi Shigekawa

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Keywords: Scanning Tunneling Microscopy, Si(001), local barrier height, surface photovoltage, tip-induced band bending

JOURNAL FREE ACCESS

2006 Volume 4 Pages 192-196

DOI https://doi.org/10.1380/ejssnt.2006.192

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Abstract

Local barrier height (LBH) of Si(001) surface was studied using light-modulated scanning tunneling spectroscopy (LM-STS), which enables the observation of the tip-sample-dependent LBH with or without photoillumination simultaneously. The bias voltage and tip-sample distance dependence of LBH were comprehensively understood by the tip-induced band bending (TIBB), which influences the scanning tunneling microscopy and spectroscopy (STM/STS) in measurement of the local electronic structures of semiconductors. A marked decrease in surface photovoltage caused by photocarrier tunneling at shorter tip-sample distance was also shown. On the basis of these results, a method to measure LBH free of TIBB is discussed. [DOI: 10.1380/ejssnt.2006.192]

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