e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -ISSS-4-
Raman Scattering in GaN Nanocolumns and GaN/AlN Multiple Quantum Disk Nanocolumns
Tomoyuki SekineShintaro SuzukiHaruhiko KuroeMakoto TadaAkihiko KikuchiKatsumi Kishino
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2006 Volume 4 Pages 227-232

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Abstract

We have studied phonon mode behavior in GaN nanocolumns and GaN/AlN multiple quantum disk nanocolumns, which are self-organized on Al2O3 and Si by RF-MBE, by means of Raman scattering. In GaN nanocolumns, we observe a Fröhlich mode localized at the surface of nanocolumns. The frequency and line width strongly depend on the column density and its inhomogeneity. It is demonstrated that Raman scattering is a useful method to characterize the crystal properties of the nanocolumns. In GaN/AlN multiple quantum disk nanocolumns, we observe several confined, quasi-confined and interface phonon modes, whose wave vectors along the axial direction may be quantized by the columnar nanostructures. [DOI: 10.1380/ejssnt.2006.227]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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