Interfacial reaction in ZrO2/Si gate-stack structure probed by photoemission spectroscopy combined with combinatorial annealing system

J. Okabayashi; S. Toyoda; H. Takahashi; H. Kumigashira; M. Oshima; K. Ikeda; G. L. Liu; Z. Liu; K. Usuda

doi:10.1380/ejssnt.2006.263

Conference -ISSS-4-

Interfacial reaction in ZrO₂/Si gate-stack structure probed by photoemission spectroscopy combined with combinatorial annealing system

J. Okabayashi, S. Toyoda, H. Takahashi, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Author information

J. Okabayashi
Department of Applied Chemistry, The University of Tokyo, Japan
S. Toyoda
Department of Applied Chemistry, The University of Tokyo, Japan
H. Takahashi
Department of Applied Chemistry, The University of Tokyo, Japan
H. Kumigashira
Department of Applied Chemistry, The University of Tokyo, Japan
M. Oshima
Department of Applied Chemistry, The University of Tokyo, Japan
K. Ikeda
Semiconductor Technology Academic Research Center, Japan
G. L. Liu
Semiconductor Technology Academic Research Center, Japan
Z. Liu
Semiconductor Technology Academic Research Center, Japan
K. Usuda
Semiconductor Technology Academic Research Center, Japan

Keywords: ZrO₂/Si gate stack, silicidation, photoemission spectroscopy, combinatorial annealing

JOURNAL FREE ACCESS

2006 Volume 4 Pages 263-266

DOI https://doi.org/10.1380/ejssnt.2006.263

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Abstract

We have investigated the mechanism of Zr silicidation from ZrO₂/Si gate-stack structure in ultralarge-scaled-integration devices by high-resolution core-level photoemission spectroscopy with annealing-temperature controlling. We have found that the interfacial SiO₂ layer thickness is tunable by controlling the annealing temperature and the silicidation occurs in the narrow annealing-temperature ranges. New method by combinatorial annealing system enables to control the narrow-range annealing temperature for the observation of the silicidation processes and to discuss the silicidation chemical reaction thermodynamically based on the annealing-temperature dependence in core-level photoemission spectra. [DOI: 10.1380/ejssnt.2006.263]

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