e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Regular Papers
Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface
Y. YamashitaS. YamamotoK. MukaiJ. YoshinobuY. HaradaT. TokushimaT. TakeuchiY. TakataS. ShinK. AkagiS. Tsuneyuki
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2006 Volume 4 Pages 280-284

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Abstract

For today's silicon based devices, understanding the SiO2/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO2/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO2/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties. [DOI: 10.1380/ejssnt.2006.280]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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