The results of investigations devoted to a search of conditions of the simultaneous metal and semiconductor silicides formation being important problem for microelectronics are presented in the paper. The Si(111)-Fe and Si(111)-Cr systems having been chosen due to low lattice misfit of silicides observed in they were studied by the methods of Differential Reflection Spectroscopy (DRS) and Atomic Force Microscopy (AFM). The new method (Restored Standard method) having been invented for DRS studying of solid phase epitaxy (SPE) in these systems is first noted. The detailed description of processes occurred in the investigated systems and optimal conditions for the simultaneous metal and semiconductor silicides formation are presented in paper. [DOI: 10.1380/ejssnt.2006.319]