2006 Volume 4 Pages 359-364
Recently, we proposed an accurate compositional analytical technique for epitaxial Si1-xGex thin films [S. Takeno, et al., Proceedings of 8APEM (8th Asia-Pacific Conference on Electron Microscopy), 497 (2004)]. The technique was based on two-beam CBED (Convergent Beam Electron Diffraction) with a novel correction method for the thermal diffuse scattering effect. Experimental results for the new technique showed excellent accuracy, equivalent to RBS (Rutherford Backscattering Spectrometry) analysis in low x cases. However, the validity of the analytical technique over a wide range of values of x has been unclear so far. In this paper, the applicable criteria of the correction method are discussed in detail from the viewpoints of temperature dependence of the Debye-Waller factor in the Si-Ge binary system, and the influence of the locally induced stress. [DOI: 10.1380/ejssnt.2006.359]
