Spray pyrolysis deposition technique has been used to grow ZnO thin films doped with different dopant species (Al, Cu, I). The optical and electrical properties of films were investigated as function of dopant type and concentration. The structural characteristics of undoped and doped ZnO films were studied using X-ray diffraction (XRD). The electrical resistivity as low as 4 × 10^-2 Ωcm was obtained for ZnO:Al with 5 at.% dopant concentration. ZnO:Cu films prepared at specific conditions exhibited p-type conductivity. The optical band gap of doped ZnO films varied from 3.09 eV to 3.2 eV. XRD investigation confirmed that the doped ZnO films had preferred orientation in the direction of (101) plane. [DOI: 10.1380/ejssnt.2006.636]