Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond

S. Kono; K. Mizuochi; G. Takyo; N. I. Plusnin; T. Aoyama; T. Goto; T. Abukawa; A. Namba; Y. Nishibayashi; T. Imai

doi:10.1380/ejssnt.2007.33

Conference -JRSSS7-

Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond

S. Kono, K. Mizuochi, G. Takyo, N. I. Plusnin, T. Aoyama, T. Goto, T. Abukawa, A. Namba, Y. Nishibayashi, T. Imai

Author information

S. Kono
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
CREST, JST, Japan
K. Mizuochi
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
G. Takyo
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
N. I. Plusnin
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
T. Aoyama
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
T. Goto
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
T. Abukawa
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
A. Namba
Sumitomo Electric Industry Ltd., Japan
Y. Nishibayashi
Sumitomo Electric Industry Ltd., Japan
T. Imai
Sumitomo Electric Industry Ltd., Japan

Keywords: Diamond, Ultraviolet photoelectron spectroscopy, Secondary electron spectroscopy, X-ray photoelectron spectroscopy, Photoemission electron micro-spectroscopy, Surface energy band diagram, Electron affinity

JOURNAL FREE ACCESS

2007 Volume 5 Pages 33-40

DOI https://doi.org/10.1380/ejssnt.2007.33

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Abstract

The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and photoemission electron micro-spectroscopy. A hydrogen-terminated boron-doped diamond (001) surface was used as a reference of surface energy band diagram. The electron affinity of the H-terminated heavily P-doped diamond was determined to be 0.2 ± 0.15 eV, thus close to zero. The electron affinity of the O-terminated highly P-doped diamond was determined to be 0.0 ± 0.15 eV, thus can be negative. However, the surface energy bands for the two highly P-doped samples were found to have large amounts (3 eV) of upward bending toward surface. [DOI: 10.1380/ejssnt.2007.33]

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