Determination of Band Structures of InN/GaN Interfaces by Synchrotron Radiation Hard X-ray Photoemission Spectroscopy

Yasushi Toyoshima; Koji Horiba; Masaharu Oshima; Jitsuo Ohta; Hiroshi Fujioka; Hisayuki Miki; Shigenori Ueda; Yoshiyuki Yamashita; Hideki Yoshikawa; Keisuke Kobayashi

doi:10.1380/ejssnt.2008.254

Conference -ISSS-5-

Determination of Band Structures of InN/GaN Interfaces by Synchrotron Radiation Hard X-ray Photoemission Spectroscopy

Yasushi Toyoshima, Koji Horiba, Masaharu Oshima, Jitsuo Ohta, Hiroshi Fujioka, Hisayuki Miki, Shigenori Ueda, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi

Author information

Yasushi Toyoshima
Department of Applied Chemistry, The University of Tokyo, Japan
Koji Horiba
Department of Applied Chemistry, The University of Tokyo, Japan
Core Research for Evolutional Science and Technology of Japan Science and Technology Agency, Japan
Synchrotron Radiation Research Organization, The University of Tokyo, Japan
Masaharu Oshima
Department of Applied Chemistry, The University of Tokyo, Japan
Core Research for Evolutional Science and Technology of Japan Science and Technology Agency, Japan
Synchrotron Radiation Research Organization, The University of Tokyo, Japan
Jitsuo Ohta
Institute of Industrial Science, The University of Tokyo, Japan
Hiroshi Fujioka
Institute of Industrial Science, The University of Tokyo, Japan
Hisayuki Miki
Showa Denko K. K., Japan
Shigenori Ueda
NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan
Yoshiyuki Yamashita
NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan
Hideki Yoshikawa
NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan
Keisuke Kobayashi
NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan

Keywords: Synchrotron radiation photoelectron spectroscopy, Epitaxy, Gallium nitride, Indium nitride, Heterojunctions

JOURNAL FREE ACCESS

2008 Volume 6 Pages 254-257

DOI https://doi.org/10.1380/ejssnt.2008.254

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Abstract

We have determined the valence band discontinuities of InN/Mg:GaN and InN/Si:GaN heterostructures by hard x-ray photoemission spectroscopy. InN thin films were grown by pulsed laser deposition method and streaky high-energy electron diffraction pattern was observed, indicating that good crystalline InN films were grown. The value of valence band discontinuity for InN/Mg:GaN is as small as 0.3 eV, while that for InN/Si:GaN is 1.4 eV. The fact that the InN/Mg:GaN interface has the small energy barrier suggests that InN is very promising for the interlayer between transparent conductive layers and Mg:GaN in light emitting diode structures. [DOI: 10.1380/ejssnt.2008.254]

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