Growth of Ultra-Thin MnSi Films on Si(111) Surface: Monte Carlo Simulation

Pavel Kocán; Shougo Higashi; Hiroshi Tochihara

doi:10.1380/ejssnt.2008.276

Regular Papers

Growth of Ultra-Thin MnSi Films on Si(111) Surface: Monte Carlo Simulation

Pavel Kocán, Shougo Higashi, Hiroshi Tochihara

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Keywords: Monte Carlo simulations, Scanning Tunneling Microscopy, Silicides, MnSi, Si(111)

JOURNAL FREE ACCESS

2008 Volume 6 Pages 276-280

DOI https://doi.org/10.1380/ejssnt.2008.276

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Abstract

Thin MnSi films growing by units of a quadruple layer of a B20-type structure are observed on the Si(111) surface by scanning tunneling microscopy. Based on the observation, a model of growth controlled by an interplay between MnSi crystal growth and supply of Si atoms from substrate is proposed. A simple Monte Carlo model efficiently simulating significant experimentally observed features is presented. [DOI: 10.1380/ejssnt.2008.276]

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