Surface X-ray Diffraction Study of the Metal-Insulator Transition on the Si(553)-Au Surface

Wolfgang Voegeli; Toru Takayama; Kimitaka Kubo; Makoto Abe; Yusaku Iwasawa; Tetsuroh Shirasawa; Toshio Takahashi; Koichi Akimoto; Hiroshi Sugiyama; Hiroo Tajiri; Osami Sakata

doi:10.1380/ejssnt.2008.281

Conference -ISSS-5-

Surface X-ray Diffraction Study of the Metal-Insulator Transition on the Si(553)-Au Surface

Wolfgang Voegeli, Toru Takayama, Kimitaka Kubo, Makoto Abe, Yusaku Iwasawa, Tetsuroh Shirasawa, Toshio Takahashi, Koichi Akimoto, Hiroshi Sugiyama, Hiroo Tajiri, Osami Sakata

Author information

Wolfgang Voegeli
Institute for Solid State Physics, University of Tokyo, Japan
Toru Takayama
Institute for Solid State Physics, University of Tokyo, Japan
Kimitaka Kubo
Institute for Solid State Physics, University of Tokyo, Japan
Makoto Abe
Institute for Solid State Physics, University of Tokyo, Japan
Yusaku Iwasawa
Institute for Solid State Physics, University of Tokyo, Japan
Tetsuroh Shirasawa
Institute for Solid State Physics, University of Tokyo, Japan
Toshio Takahashi
Institute for Solid State Physics, University of Tokyo, Japan
Koichi Akimoto
Department of Quantum Engineering, Nagoya University, Japan
Hiroshi Sugiyama
Photon Factory, High Energy Accelerator Research Organization, Japan
Hiroo Tajiri
Japan Synchrotron Radiation Research Institute, Japan
Osami Sakata
Japan Synchrotron Radiation Research Institute, Japan

Keywords: X-ray scattering, diffraction, and reflection, Metal-insulator transition, Phase transition in low dimensions, Silicon, Gold, Si(553)

JOURNAL FREE ACCESS

2008 Volume 6 Pages 281-285

DOI https://doi.org/10.1380/ejssnt.2008.281

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Abstract

We have studied the metal-insulator transition near room temperature on the Si(553)-Au surface with surface X-ray diffraction. Diffraction intensities due to the ×2 superstructure developing in the transition were collected at 86 K. The Patterson map calculated from the experimental intensities shows that only a few atoms are involved in the transition. The atoms are displaced mostly in the surface plane. The temperature dependence of the intensity and width of one reflection due to the low temperature superstructure was measured as well. The changes in the intensity of this reflection below the transition temperature are consistent with the predictions by the mean-field theory for a Peierls transition at 336 K. The changes of the intensity above the transition temperature and the temperature dependence of the width of the reflection can be explained by the influence of defects. [DOI: 10.1380/ejssnt.2008.281]

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