e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -ISSS-5-
Obstruction of Si Crystal Growth by Surface Hydrogen Desorption
Yasutake TOYOSHIMA
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2008 Volume 6 Pages 286-290

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Abstract

By monitoring the post-growth behavior of surface bonded hydrogen on the Si films prepared from gas phase discharge of SiH4, it is shown that thermal desorption of surface hydrogen from multi-hydride (SiH2 and SiH3) configurations obstructs crystal formation through a disruption of Td symmetry in Si bonding. [DOI: 10.1380/ejssnt.2008.286]

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