2008 Volume 6 Pages 286-290
By monitoring the post-growth behavior of surface bonded hydrogen on the Si films prepared from gas phase discharge of SiH4, it is shown that thermal desorption of surface hydrogen from multi-hydride (SiH2 and SiH3) configurations obstructs crystal formation through a disruption of Td symmetry in Si bonding. [DOI: 10.1380/ejssnt.2008.286]