Integration of non-crystalline and nanocrystalline thin films and nanocrystalline/non-crystalline composites in devices generally requires isotropic properties, and minimization of macroscopic strain. A novel pathway for obtaining isotropic properties and strain reductions is identified. The microscopic mechanism is based on nano-scale chemical bonding self organizations such as those that occur in intermediate phases, IPs, of non-crystalline glasses and thin films. This article emphasizes the importance on internal interfacial properties and the critical role they play. This understanding has emerged from studies on qualitatively different thin film materials, such as (i) As-Se thin film photoreceptors for electro-photographic applications, (ii) thin film transistor dielectrics for liquid crystal displays, (iii) high-k replacement dielectrics for SiO₂ in aggressively-scaled field effect transistors, and (iv) passive thin films for optically switched memory cells. [DOI: 10.1380/ejssnt.2009.375]