Epitaxial Growth of Bi(111) on Si(001)

G. Jnawali; H. Hattab; C. A. Bobisch; A. Bernhart; E. Zubkov; C. Deiter; T. Weisemoeller; F. Bertram; J. Wollschläger; R. Möller; M. Horn-von Hoegen

doi:10.1380/ejssnt.2009.441

Conference -ICSFS-14-

Epitaxial Growth of Bi(111) on Si(001)

G. Jnawali, H. Hattab, C. A. Bobisch, A. Bernhart, E. Zubkov, C. Deiter, T. Weisemoeller, F. Bertram, J. Wollschläger, R. Möller, M. Horn-von Hoegen

Author information

G. Jnawali
Fachbereich Physik, Universität Duisburg-Essen, Germany
H. Hattab
Fachbereich Physik, Universität Duisburg-Essen, Germany
C. A. Bobisch
Fachbereich Physik, Universität Duisburg-Essen, Germany
A. Bernhart
Fachbereich Physik, Universität Duisburg-Essen, Germany
E. Zubkov
Fachbereich Physik, Universität Duisburg-Essen, Germany
C. Deiter
Fachbereich Physik, Universität Osnabrück, Germany
T. Weisemoeller
Fachbereich Physik, Universität Osnabrück, Germany
F. Bertram
Fachbereich Physik, Universität Osnabrück, Germany
J. Wollschläger
Fachbereich Physik, Universität Osnabrück, Germany
R. Möller
Fachbereich Physik, Universität Duisburg-Essen, Germany
Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, Germany
M. Horn-von Hoegen
Fachbereich Physik, Universität Duisburg-Essen, Germany
Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, Germany

Keywords: Bismuth, Low-energy electron diffraction (LEED), Dislocation, Scanning tunneling microscopy (STM), Heteroepitaxy, X-ray diffraction, X-ray reflectivity

JOURNAL FREE ACCESS

2009 Volume 7 Pages 441-447

DOI https://doi.org/10.1380/ejssnt.2009.441

Erratum : e-JSSNT Vol. 7, p. 795 (2009)

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Abstract

Despite the large lattice misfit and different lattice symmetry, it is possible to grow smooth and almost defect-free bismuth (Bi) films on a Si(001) substrate. High resolution low-energy electron diffraction measurements have confirmed that the (111) orientation is the preferred direction of the growth. However, at low temperature and low coverage regime, rotationally disordered crystallites of (110) orientation are also observed. After the formation of a continuous layer at 5.6 bilayer (2.2nm), the growth occurs in a bilayer-by-bilayer fashion at 150 K. The remaining lattice mismatch of 2.3% is accommodated by a periodic array of interfacial misfit dislocations, which gives rise to a periodic surface height undulation with sub-ångström amplitude. Additional growth to the desired thickness caps the height undulation resulting in an atomically smooth surface (terrace size > 100nm). The Bi(111) film is relaxed to bulk lattice constant and shows excellent crystalline quality with an abrupt interface to the Si substrate. [DOI: 10.1380/ejssnt.2009.441]

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