2009 Volume 7 Pages 486-490
Ultra-thin films of 57Fe deposited on silicon substrates and SiOxCyHz support layers and subsequently oxidized in laboratory atmosphere are studied by two optical methods: the combination of UV/VIS/NIR spectroscopic ellipsometry and spectrophotometry, used to find layer thicknesses and optical constants, and X-ray specular reflectometry, used to obtain the electron density depth profile. The results of both methods are compared and found to be in a relatively good agreement. [DOI: 10.1380/ejssnt.2009.486]