e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -ICSFS-14-
Growth and Characterisation of Al1-xCrxN Thin Films by RF Plasma Assisted Pulsed Laser Deposition
Brendan J. ArnoldSatheesh KrishnamurthyBrian KennedyDeclan CockburnDaniel McNallyJames G. LunneyRobbie GunningM. VenkatesanJ. AlariaJ. MichaelD. CoeyCormac McGuinnessJ.-H. Guo
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2009 Volume 7 Pages 497-502

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Abstract

Thin films of AlN, CrN and Al1-xCrxN were grown epitaxially on c-cut sapphire by radio frequency (RF) plasma assisted pulsed laser deposition (PLD). The PLD growth mode employed for these Al1-xCrxN films was by delta doping layers of CrN 0.05-0.10 nm thick between layers of AlN of approximately 3.6 nm thick giving an estimated 1.3% and 2.5% Cr doping. The substrate temperature, nitrogen pressure and power parameters of the RF plasma were varied to optimize crystalline growth. X-ray diffraction (XRD) confirmed hexagonal wurtzite thin film growth of highly crystalline AlN and highly crystalline cubic CrN. The electronic structure of these thin films was examined by x-ray absorption (XAS) and soft x-ray emission spectroscopy (XES) at the N K edge. These measurements are compared with the results of density functional calculations for wurtzite-AlN, cubic-CrN and wurtzite-Al1-xCrxN. [DOI: 10.1380/ejssnt.2009.497]

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