V-shaped grooves were prepared by patterning of line and space (LS) using photolithography and BHF etching, and anisotropic etching using hot KOH solution on patterned 100 nm-SiO₂/Si(001) substrate. The V-shaped grooves consist of two <111> planes. The width of grooves was varied from 2 to 10 μm while keeping intervals (<001> planes with 1 μm width) between grooves. The heteroepitaxial growth of InSb films on the V-grooved Si(001) substrate was carried out by using a two-step growth procedure in an ultra-high vacuum chamber. The samples were characterized by X-ray diffraction (XRD) and scanning electron micrograph as a function of the space width of LS. From comparison of the XRD pattern of InSb films grown on Si(001) substrate with and without the V-grooves, we found that InSb crystals were heteroepitaxially grown not only on the <111> surface of the V-shaped grooves but also on the narrow (at least <3 μm) (001) surfaces. [DOI: 10.1380/ejssnt.2009.669]