1.3-µm InGaAlAs-BH laser with Cl2/N2 ECR plasma etched mesas

Hiroyuki Uchiyama; Hiroshi Sato; Kazunori Shinoda; Akira Taike; Takafumi Taniguchi; Shinji Tsuji

doi:10.1587/elex.1.193

LETTER

1.3-µm InGaAlAs-BH laser with Cl₂/N₂ ECR plasma etched mesas

Hiroyuki Uchiyama, Hiroshi Sato, Kazunori Shinoda, Akira Taike, Takafumi Taniguchi, Shinji Tsuji

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Keywords: InGaAlAs, laser, Cl₂, N₂, ECR, dry etching

JOURNAL FREE ACCESS

2004 Volume 1 Issue 7 Pages 193-197

DOI https://doi.org/10.1587/elex.1.193

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Abstract

We developed a dry etching process suitable for fabricating InGaAlAs laser mesa stripes. We used optimized Cl₂/N₂ ECR plasma for etching an InGaAlAs laser multilayer structure. This Cl₂/N₂ ECR plasma led to a uniform etching rate and an anisotropic profile using a nitrified side-protection mechanism. This smooth and anisotropic dry etching produced a well-matched interface for semi-insulated Fe-InP regrowth. It also enabled successfully fabricating an InGaAlAs buried heterostructure laser. The laser showed stable operation at 85°C and long-term reliability over 5000 hrs.

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