Raman induced wavelength conversion in scaled Silicon waveguides

Varun Raghunathan; Dimitris Dimitropoulos; Ricardo Claps; Bahram Jalali

doi:10.1587/elex.1.298

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Raman induced wavelength conversion in scaled Silicon waveguides

Varun Raghunathan, Dimitris Dimitropoulos, Ricardo Claps, Bahram Jalali

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Keywords: Integrated optics, Nonlinear optics, Raman scattering, Wavelength conversion

JOURNAL FREE ACCESS

2004 Volume 1 Issue 11 Pages 298-304

DOI https://doi.org/10.1587/elex.1.298

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Abstract

Parametric Raman nonlinearities in Silicon waveguides is used to demonstrate wavelength conversion from Stokes to anti-Stokes channels. The effects of two photon absorption and free carrier nonlinear losses on the conversion process have also been analyzed. We find that scaling down the waveguide dimensions to submicron sizes is advantageous in terms of increasing the Raman nonlinearities and reducing the carrier lifetime and hence nonlinear absorption.

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