GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors

Hideki Yagi; Takuya Sano; Koji Miura; Dhanorm Plumwongrot; Kazuya Ohira; Takeo Maruyama; Shigehisa Arai

doi:10.1587/elex.1.540

LETTER

GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO₂/semiconductor reflectors

Hideki Yagi, Takuya Sano, Koji Miura, Dhanorm Plumwongrot, Kazuya Ohira, Takeo Maruyama, Shigehisa Arai

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Keywords: quantum-wire laser, strain-compensated quantum-well structure, GaInAsP/InP, CH₄/H₂ RIE, OMVPE regrowth

JOURNAL FREE ACCESS

2004 Volume 1 Issue 17 Pages 540-544

DOI https://doi.org/10.1587/elex.1.540

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Abstract

GaInAsP/InP strain-compensated multiple-quantum-wire lasers (wire widths of 19nm and 27nm in a period of 100nm) with SiO₂/semiconductor reflectors were realized by electron-beam lithography, CH₄/H₂ reactive ion etching and two-step organometallic vapor-phase-epitaxial growth processes. As a result, the threshold current densities of these quantum-wire lasers were lower than those of quantum-film lasers prepared on the same initial wafer and oscillations from the transition between the ground levels were observed at room temperature.

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