High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates

N. Dharmarasu; P. O. Vaccaro; S. Saravanan; J. M. Zanardi Ocampo; K. Kubota; N. Saito

doi:10.1587/elex.1.86

LETTER

High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates

N. Dharmarasu, P. O. Vaccaro, S. Saravanan, J. M. Zanardi Ocampo, K. Kubota, N. Saito

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Keywords: Light-emitting diodes, lateral p-n junctions, gallium compounds, high-density LED arrays, patterned-substrates

JOURNAL FREE ACCESS

2004 Volume 1 Issue 5 Pages 86-91

DOI https://doi.org/10.1587/elex.1.86

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Abstract

We report the high-density light-emitting diode (LED) array using a lateral p-n junction. Al_xGa_1-xAs lateral p-n junctions were formed on a semi-insulating GaAs (311)A patterned substrate using the amphoteric nature of silicon that behaves as p- and n-type dopant. For the first time, 2400 dots-per-inch (dpi) LED arrays were fabricated using the lateral junction. Electroluminescence spectrum shows a single peak at a wavelength of 813nm with an FWHM of 56nm at room temperature. The light output power was measured as a function of forward injection current. The high-density LED array has potential application in LED printers and displays.

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