Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu; Yoshino K. Fukai; Masami Tokumitsu; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni

doi:10.1587/elex.3.310

LETTER

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

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Keywords: HEMT, FET, InP, InGaAs, reliability, cutoff frequency

JOURNAL FREE ACCESS

2006 Volume 3 Issue 13 Pages 310-315

DOI https://doi.org/10.1587/elex.3.310

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Abstract

We report two-step-recess gate InP HEMTs with a new process option suitable for producing a wide recess. In the new devices the gate recess is completely covered with a passivation film. Though the gate recess is extremely wide, a transconductance of 1S/mm and a cutoff frequency of 208GHz are achieved with 100-nm gate devices. Moreover, a huge improvement in the drain reliability is achieved by the wide recess which reduces hot-carrier-induced degradation, and by the full passivation which eliminates the instability related to the recess surface.

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