Development of high-yield fabrication technique for MEMS-PhC devices

A. Higo; S. Iwamoto; S. Ishida; Y. Arakawa; M. Tokushima; A. Gomyo; H. Yamada; H. Fujita; H. Toshiyoshi

doi:10.1587/elex.3.39

LETTER

Development of high-yield fabrication technique for MEMS-PhC devices

A. Higo, S. Iwamoto, S. Ishida, Y. Arakawa, M. Tokushima, A. Gomyo, H. Yamada, H. Fujita, H. Toshiyoshi

Author information

A. Higo
Institute of Industrial Science, The University of Tokyo
Kanagawa Academy of Science & Technology
S. Iwamoto
Institute of Industrial Science, The University of Tokyo
Research Center of Advanced Science and Technology, The University of Tokyo
S. Ishida
Institute of Industrial Science, The University of Tokyo
Research Center of Advanced Science and Technology, The University of Tokyo
Y. Arakawa
Institute of Industrial Science, The University of Tokyo
Research Center of Advanced Science and Technology, The University of Tokyo
M. Tokushima
Fundamental and Environmental Research Laboratories, NEC Corporation
A. Gomyo
Fundamental and Environmental Research Laboratories, NEC Corporation
H. Yamada
Fundamental and Environmental Research Laboratories, NEC Corporation
H. Fujita
Institute of Industrial Science, The University of Tokyo
H. Toshiyoshi
Institute of Industrial Science, The University of Tokyo
Kanagawa Academy of Science & Technology

Keywords: optical modulators, electrostatic actuators, photonic integrated circuits, 2-dimensinal photonic crystal waveguide

JOURNAL FREE ACCESS

2006 Volume 3 Issue 3 Pages 39-43

DOI https://doi.org/10.1587/elex.3.39

Details

Abstract

We propose a high-yield fabrication processing technique for the MEMS (micro electro mechanical system) modulators integrated with two-dimensional photonic crystal waveguides. Polysilicon microactuators for evanescent modulation was successfully developed by using the vapor hydrofluoric-acid releasing technique for stiction-free sacrificial release, during which the SOI photonic-crystal waveguides were protected under the LPCVD silicon nitride film. Post-release anneal was found to be needed to remove the byproduct made by the reaction of hydrofluoric acid with silicon nitride film. Preliminary optical modulation result (-2dB modulation with 86V) was experimentally obtained.

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