LETTER
Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain
2007 Volume 4 Issue 14 Pages 442-447
Details
2007 Volume 4 Issue 14 Pages 442-447
Tunneling Dielectric Thin-Film Transistor (TDTFT), which was proposed to reduce the gate-off current by utilizing a tunneling effect, was fabricated in a bottom-gate structure. For the tunneling dielectric, a 1.7-nm-thick SiNx film was deposited onto the source and drain by a low-pressure chemical vapor deposition (LPCVD) method. The gate-off current of the TDTFT was reduced less than 1/10 in comparison with a conventional TFT. Although the subthreshold characteristics and the gm were degraded due to the tunnel resistance, it will be compensated by further thinning of SiNx film or using the material with the barrier height lower than SiNx.
