IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
The effect of a low dielectric material placed at the tip of a GTEM cell on the electric field
Ifong WuShinobu IshigamiKaoru GotohYasushi Matsumoto
Author information
JOURNAL FREE ACCESS

2009 Volume 6 Issue 22 Pages 1608-1614

Details
Abstract

The effect of a low dielectric block placed at the tip of a GTEM cell on the electric field was numerically and experimentally investigated from 1-16GHz. The block increased the electric field strength when placed at the GTEM cell tip. Comparison of the simulation and measurement results revealed good agreement between them. However, we also confirmed that when the low dielectric block was installed in a location far from the GTEM cell tip, it had little influence on the electric field, regardless of its size. It is concluded that a low dielectric material increases the electric field strength when it is placed at the tip of a GTEM cell.

Content from these authors
© 2009 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top