Intense photoluminescence from erbium-doped tantalum oxide thin films deposited by sputtering

Mayank Kumar Singh; Genjoh Fusegi; Kazusa Kano; Jaspal Parganram Bange; Kenta Miura; Osamu Hanaizumi

doi:10.1587/elex.6.1676

LETTER

Intense photoluminescence from erbium-doped tantalum oxide thin films deposited by sputtering

Mayank Kumar Singh, Genjoh Fusegi, Kazusa Kano, Jaspal Parganram Bange, Kenta Miura, Osamu Hanaizumi

Author information

Keywords: erbium, tantalum oxide, photoluminescence, annealing, sputtering

JOURNAL FREE ACCESS

2009 Volume 6 Issue 23 Pages 1676-1682

DOI https://doi.org/10.1587/elex.6.1676

Details

Abstract

Erbium-doped tantalum oxide films were prepared by radio-frequency magnetron sputtering. Visible light emission was observed from the films after annealing. We obtained PL peaks at 550 and 670nm. The effects of erbium concentration, annealing temperature, and annealing time on the light-emitting properties of the films are discussed. The strongest intensities of the 550 and 670nm peaks were observed from the samples with 0.96 and 0.63mol% erbium concentrations after annealing at 900°C for 20min, respectively.

Corresponding author

Register with J-STAGE for free!