A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module

Toshihiko Kosugi; Hiroki Sugiyama; Koichi Murata; Hiroyuki Takahashi; Akihiko Hirata; Naoya Kukutsu; Yuichi Kado; Takatomo Enoki

doi:10.1587/elex.6.1764

LETTER

A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module

Toshihiko Kosugi, Hiroki Sugiyama, Koichi Murata, Hiroyuki Takahashi, Akihiko Hirata, Naoya Kukutsu, Yuichi Kado, Takatomo Enoki

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Keywords: millimeter-wave, power amplifier, HEMT

JOURNAL FREE ACCESS

2009 Volume 6 Issue 24 Pages 1764-1768

DOI https://doi.org/10.1587/elex.6.1764

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Abstract

A millimeter-wave power amplifier module achieves 140mW maximum output power and 80mW output 1-dB gain compression point at 125GHz. The 0.08µm gate length InGaAs/InP composite-channel HEMTs were applied to single-chip coplanar-design amplifier MMIC. The module's output power in this frequency band is a record to the best of our knowledge.

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