2009 Volume 6 Issue 11 Pages 673-688
The helical structure of progress in microwave and millimeter-wave technologies, with a focus on active device technology and circuit technology, is overviewed with some examples. The position of, and the possibilities for emerging GaN power devices and Si RF devices are described. In addition, as a new trend for methods in global analysis combining electro-magnetic waves and semiconductor devices, FDTD co-simulation is overviewed with the latest example on a 60GHz amplifier module. Finally, the circuit technology in which the helical structure strongly dominates is overviewed. As one of endless targets for microwave circuit technology, the latest design technique for high power efficiency microwave circuits is introduced, in which co-simulation of electro-magnetic waves and semiconductor devices are effectively used.