IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
New charge pump circuits for high output voltage and large current drivability
In-Young ChungJongshin Shin
Author information
JOURNAL FREE ACCESS

2009 Volume 6 Issue 12 Pages 800-805

Details
Abstract

New charge pump circuits with high current drivability in low supply voltage are proposed. It generates a large gate-overdrive voltage of charge transfer MOSFET by pulling down the gate node voltage by deliberate leakage. A proper clock circuit is also presented to effectively suppress accompanied loss effects. The characteristics of the proposed charge pumps were investigated through simulation and measurement of fabricated circuit. The measurement result shows an excellent pumping performance especially under the condition of heavy load current.

Content from these authors
© 2009 by The Institute of Electronics, Information and Communication Engineers
Next article
feedback
Top