IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances
Nathabhat PhankongTsuyoshi FunakiTakashi Hikihara
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JOURNAL FREE ACCESS

2010 Volume 7 Issue 14 Pages 1051-1057

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Abstract

Transient behavior in switching operation of junction field-effect transistors (JFETs) is affected by their intrinsic parasitic capacitances. This paper focuses on the switching operation of lateral-type and vertical-type SiC JFETs with considering the charge/discharge behavior of parasitic capacitances in the device. Their device structure decides the voltage dependency of the capacitance characteristics, so that the C-V characteristics governs their switching behavior.

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© 2010 by The Institute of Electronics, Information and Communication Engineers
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