Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho; In Man Kang; Kyung Rok Kim

doi:10.1587/elex.7.1499

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Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho, In Man Kang, Kyung Rok Kim

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Keywords: silicon nanowire, source-to-drain capacitance, model

JOURNAL FREE ACCESS

2010 Volume 7 Issue 19 Pages 1499-1503

DOI https://doi.org/10.1587/elex.7.1499

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Abstract

We investigated the source-to-drain capacitance (C_sd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of C_sd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y₂₂-parameter.

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