7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology

Jin-Sung Youn; Myung-Jae Lee; Kang-Yeob Park; Holger Rücker; Woo-Young Choi

doi:10.1587/elex.7.659

LETTER

7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology

Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, Woo-Young Choi

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Keywords: high-speed photoreceiver, Si avalanche photodetectors, SiGe BiCMOS, transimpedance amplifier

JOURNAL FREE ACCESS

2010 Volume 7 Issue 9 Pages 659-665

DOI https://doi.org/10.1587/elex.7.659

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Abstract

We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10^-10 at -1dBm incident optical power.

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