IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
SCR stacking structure with high holding voltage for high voltage power clamp
Jong-il WonJin-Woo JungYong-Seo Koo
Author information
JOURNAL FREE ACCESS

2011 Volume 8 Issue 16 Pages 1260-1266

Details
Abstract

The latch-up immunity of high voltage power clamps used in high voltage ESD protection devices is rapidly becoming very important in high-voltage applications. The conventional high-voltage ESD devices are unsuitable for new high-voltage applications due to their low holding voltage, low ESD robustness, and their large size. In this study, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified using a 0.35um BCD (Bipolar-CMOS-DMOS) process in order to achieve the desired holding voltage and an acceptable failure current. The experiment results show that the holding voltage of the stacking structure can exceed the operational voltage found in high-voltage applications. In addition, the stacking structure can provide a high ESD robustness.

Content from these authors
© 2011 by The Institute of Electronics, Information and Communication Engineers
Next article
feedback
Top