IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator
Min LiaoHiroshi IshiwaraShun-ichiro Ohmi
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JOURNAL FREE ACCESS

2011 Volume 8 Issue 18 Pages 1461-1466

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Abstract

Pentacene based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of deposition temperature and deposition rate on the grain sizes of pentacene films was investigated. It was found that the grain sizes of pentacene films increase with increasing deposition temperature and decreasing deposition rate. Due to the increase in grain size, pentacene based OFET with HfON gate insulator shows enhanced electrical properties, such as a low subthreshold swing of 0.14V/decade and a large on/off current ratio of 1.1×104. Moreover, the hole mobility of pentacene based OFET with HfON gate insulator is 0.39cm2/Vs at an operating voltage of -2V.

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© 2011 by The Institute of Electronics, Information and Communication Engineers
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