IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Optical properties of photo-electrochemical etching of anisotropic silicon (110)
Maryam AmirhoseinyZainuriah HassanNg ShaShiong
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2012 Volume 9 Issue 8 Pages 752-757

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Abstract

Photo-electrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. SEM results shows groove structure for etched Si (110). The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy of etched Si (110) as a function of etching time was studied. All samples showed a PL peak in the visible spectral and the intensity of the PL peak increases with rising of the etching time. It is also found that the Raman peak of the etched Si samples is red shifted and its intensity significantly decreases as the etching time increases.

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© 2012 by The Institute of Electronics, Information and Communication Engineers
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