Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance

Seongjae Cho; Hyungjin Kim; Min-Chul Sun; In Man Kang; Byung-Gook Park; James S. Harris, Jr.

doi:10.1587/elex.9.828

Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris, Jr.

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Keywords: methodology, channel length limit, tunneling field-effect transistor, silicon nanowire, evaluating function, tunneling-predominance

JOURNAL FREE ACCESS

2012 Volume 9 Issue 9 Pages 828-833

DOI https://doi.org/10.1587/elex.9.828

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Abstract

In this work, a strategic methodology to determine the channel length limit for the predominance of tunneling mechanism in the operation of a tunneling field-effect transistor (TFET) is suggested and validated for silicon (Si) nanowire TFET device. For quantitative analyses that can be graphitized as a function of channel length, a set of evaluating functions were defined and properly applied. Based on the suggested methodology, the upper limit for keeping the Si TFET under the tunneling-predominant operation turned out to be approximately 65nm in a nanowire structure.

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