Highly c-axis-oriented aluminum nitride (AlN) thin film sensor elements were prepared on silicon single crystal by rf magnetron sputtering technique. The sensor characteristics were evaluated under pressures of 0.1 to 1.6 MPa and frequency of 0.1 to 100 Hz at room temperature. The deviation from the linearity of charges with pressures for the AlN sensor was within 1.49% of a full scale at 1.6 MPa, which indicates a good linearity between 0.1 and 1.6 MPa. The AlN sensor showed a good flat frequency characteristic between 1 and 100 Hz. It is confirmed that the AlN thin film has a good possibility as a pressure sensor.