Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD

Naoki WAKIYA; Yusuke KIMURA; Naonori SAKAMOTO; Desheng FU; Toru HARA; Takashi ISHIGURO; Takanori KIGUCHI; Kazuo SHINOZAKI; Hisao SUZUKI

doi:10.2109/jcersj2.117.1004

Papers

Doping effect of Dy on leakage current and oxygen sensing property of SrTiO₃ thin film prepared by PLD

Naoki WAKIYA, Yusuke KIMURA, Naonori SAKAMOTO, Desheng FU, Toru HARA, Takashi ISHIGURO, Takanori KIGUCHI, Kazuo SHINOZAKI, Hisao SUZUKI

Author information

Naoki WAKIYA
Department of Materials Science and Chemical Engineering, Shizuoka University
Yusuke KIMURA
Department of Materials Science and Chemical Engineering, Shizuoka University
Naonori SAKAMOTO
Department of Materials Science and Chemical Engineering, Shizuoka University
Desheng FU
Graduate School of Materials Science and Technology, Shizuoka University
Toru HARA
Development Planning Division, Taiyo Yuden Co., Ltd.
Takashi ISHIGURO
Development Planning Division, Taiyo Yuden Co., Ltd.
Takanori KIGUCHI
Institute for Materials Research, Tohoku University
Kazuo SHINOZAKI
Department of Metallurgy and Ceramics Science
Hisao SUZUKI
Graduate School of Materials Science and Technology, Shizuoka University

Keywords: Oxygen sensor, SrTiO₃ thin film, Dy-doping, Leakage current

JOURNAL FREE ACCESS

2009 Volume 117 Issue 1369 Pages 1004-1008

DOI https://doi.org/10.2109/jcersj2.117.1004

Details

Abstract

Polycrystalline Dy-doped SrTiO₃ thin films deposited by pulsed laser deposition (PLD) on CeO₂-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO₃ thin film deposited on ZnIn₂O₄/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti⁴⁺ is substituted by Dy³⁺, and the Dy³⁺ acts as an acceptor. Further doping of Dy³⁺ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

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