Characterization of SiC:H films deposited using HMDS precursor with C2H2 dilution gas by remote PECVD system

Sung Hyuk CHO; Doo Jin CHOI

doi:10.2109/jcersj2.117.558

Journal of the Ceramic Society of Japan

Online ISSN : 1348-6535
Print ISSN : 1882-0743
ISSN-L : 1348-6535

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Characterization of SiC:H films deposited using HMDS precursor with C₂H₂ dilution gas by remote PECVD system

Sung Hyuk CHO, Doo Jin CHOI

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Keywords: SiC:H, RPE-CVD, HMDS, Plasma, Low-k

JOURNAL FREE ACCESS

2009 Volume 117 Issue 1365 Pages 558-560

DOI https://doi.org/10.2109/jcersj2.117.558

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Abstract

Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C₂H₂ gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp³/sp² carbon bonding ratio made lower dielectric constant.

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