Formation of thick cubic boron nitride films in noble gases

Tetsutaro OHORI; Hiroki ASAMI; Jun SHIRAHATA; Tsuneo SUZUKI; Tadachika NAKAYAMA; Hisayuki SUEMATSU; Koichi NIIHARA

doi:10.2109/jcersj2.118.164

Express letters

Formation of thick cubic boron nitride films in noble gases

Tetsutaro OHORI, Hiroki ASAMI, Jun SHIRAHATA, Tsuneo SUZUKI, Tadachika NAKAYAMA, Hisayuki SUEMATSU, Koichi NIIHARA

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Keywords: Cubic boron nitride film, Radio frequency magnetron sputtering, Noble gases, He

JOURNAL FREE ACCESS

2010 Volume 118 Issue 1374 Pages 164-166

DOI https://doi.org/10.2109/jcersj2.118.164

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Abstract

A radio frequency magnetron sputtering method, specifically tailored for the deposition of thick, adherent cubic boron nitride (c-BN) thin films on silicon substrates, was developed. The surface morphology of the boron nitride thin films was changed by altering the noble gases (Kr, Ar, Ne, and He) in the chamber present during the sputtering. The sample prepared in the gas with He showed especially good adhesion. This method enabled us to grow a 1.7-μm-thick c-BN thin film on a Si(100) substrate in only rare gases at a low temperature for the first time. Fourier transform infrared spectroscopy (FT-IR) indicated that the fraction of sp³-bonded BN in the thick films was above 60%.

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