BaTiO₃ (BT) based perovskite films are expected as ferroelectric and piezoelectric materials alternating Pb(Zr,Ti)O₃ (PZT) films which involve toxicity of the lead. In the present study, we focus effects of bottom electrode structures on electrical properties of the BT films fabricated by Chemical Solution Deposition (CSD) method. The BT films were fabricated on 1–6 layered LaNiO₃ (LNO) bottom electrode on Si or Pt/Ti/SiO₂/Si substrate. The dielectric constant of the BT films fabricated on LNO/Pt/Ti/SiO₂/Si substrate showed higher values than that on the LNO/Si substrate. The dielectric constant and piezoelectric properties increased with increasing layer numbers of the LNO. The microstructure and crystal structure of the BT films was studied by means of X-ray diffraction, scanning electron microscopy (SEM), and scanning transmission electron microscopy (STEM).